Extracting the phase information from atomic memory by intensity correlation measurement

Abstract

We demonstrate experimentally controlled storage and retrieval of the optical phase information in a higher-order interference scheme based on Raman process in 87Rb atomic vapor cells. An interference pattern is observed in intensity correlation measurement between the write Stokes field and the delayed read Stokes field as the phase of the Raman write field is scanned. This result implies that the phase information of the Raman write field can be written into the atomic spin wave via Raman process in a high gain regime and subsequently read out via a spin-wave enhanced Raman process, thus achieving optical storage of phase information. This technique should find applications in optical phase image storage, holography and information processing.