The Emergence of the Local Moment Molecular Spin Transistor

dc.contributor.authorHao, Guanhua
dc.contributor.authorCheng, Ruihua
dc.contributor.authorDowben, P. A.
dc.contributor.departmentPhysics, School of Scienceen_US
dc.date.accessioned2021-07-23T19:29:47Z
dc.date.available2021-07-23T19:29:47Z
dc.date.issued2020-05
dc.description.abstractLocal moment molecular systems have now been used as the conduction channel in gated spintronics devices, and some of these three terminal devices might even be considered molecular spin transistors. In these systems, the gate voltage can be used to tune the molecular level alignment, while applied magnetic fields have an influence on the spin state, altering the magnetic properties, and providing insights to the magnetic anisotropy. More recently, the use of molecular spin crossover complexes, as the conduction channel, has led to devices that are both nonvolatile and have functionality at higher temperatures. Indeed, some devices have now been demonstrated to work at room temperature. Here, several molecular transistors, including those claiming to use single molecule magnets (SMM), are reviewed.en_US
dc.eprint.versionAuthor's manuscripten_US
dc.identifier.citationHao, G., Cheng, R., & Dowben, P. A. (2020). The emergence of the local moment molecular spin transistor. Journal of Physics. Condensed Matter: An Institute of Physics Journal, 32(23), 234002. https://doi.org/10.1088/1361-648X/ab74e4en_US
dc.identifier.urihttps://hdl.handle.net/1805/26287
dc.language.isoenen_US
dc.publisherIOPen_US
dc.relation.isversionof10.1088/1361-648X/ab74e4en_US
dc.relation.journalCondensed Matter: An Institute of Physics Journalen_US
dc.rightsPublisher Policyen_US
dc.sourceAuthoren_US
dc.subjectmolecular spintronicsen_US
dc.subjectspin transistorsen_US
dc.subjectmolecular electronicsen_US
dc.titleThe Emergence of the Local Moment Molecular Spin Transistoren_US
dc.typeArticleen_US
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