Browsing by Subject "memory resistor"

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    HODGKIN-HUXLEY MODEL FOR ACTION POTENTIAL: MEMRISTIVE CHARACTERISTICS
    (Office of the Vice Chancellor for Research, 2012-04-13) Mirza, Qurat-ul-Ann; Joglekar, Yogesh
    Memristor, a short for memory resistor, is the fourth ideal circuit element whose value varies as a function of charge that has passed through the de-vice. Voltage-gated ion channels in biological membranes share this charac-teristic of a memristor. In 1952, Hodgkin and Huxley (H-H) developed an electrical circuit model (HH model) to describe the time-dependent action potentials mediated by voltage-gated ion channels. We investigate the de-pendence of the action potential, including the onset of repeated spiking, on the applied current I, sodium and potassium channel conductance, and the membrane capacitance. We use a MATLAB code with the fourth-order Runge-Kutta method to solve the HH equations. Our results suggest that the memristive characteristics of the ion channels can be tuned over a wide range of parameters.
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    THE MEMRISTOR: FREQUENCY RESPONSE OF A HYSTERETIC DEVICE
    (Office of the Vice Chancellor for Research, 2012-04-13) Meijome, Natalia C.; Joglekar, Yogesh N.
    The memristor, postulated in the 1970’s, was recently realized in a tita-nium dioxide thin-film device and is now being commercially developed. Memristor, short for memory resistor, is the fourth fundamental circuit ele-ment whose instantaneous resistance depends not only on the voltage, but also on the history of the voltage applied to it. We investigate the frequency response of the current through a memristor due to an externally applied periodic voltage with the application of an algorithmic code using MATLAB. With these results, we are able to understand the characteristic response that this device displays for each corresponding input voltage frequency. Due to the range of response exhibited, there is the possibility of using this device in circuits to produce entirely new functions. We expect that this analysis will have implications for scientific advancement in both circuitry development as well as neuroscience due to a memristor’s ability to perform logic operations and store information. This work is supported by the Ronald E. McNair Post-Baccalaureate Achievement Program and a UROP grant (N.M.) and the NSF (Y.J.).