Developing an approach to improve beta-phase properties in ferroelectric pvd-hfp thin films

dc.contributor.advisorCheng, Ruihua
dc.contributor.authorDale, Ashley S.
dc.contributor.otherPetrache, Horia
dc.contributor.otherWassall, Stephen
dc.date.accessioned2020-05-02T12:59:35Z
dc.date.available2020-05-02T12:59:35Z
dc.date.issued2020-05
dc.degree.date2020en_US
dc.degree.disciplinePhysicsen
dc.degree.grantorPurdue Universityen_US
dc.degree.levelM.S.en_US
dc.descriptionIndiana University-Purdue University Indianapolis (IUPUI)en_US
dc.description.abstractImproved fabrication of poly(vinylindenefluoride)-hexafluoropropylene (PVDF-HFP) thin films is of particular interest due to the high electric coercivity found in the beta-phase structure of the thin film. We show that it is possible to obtain high-quality, beta-phase dominant PVDF-HFP thin films using a direct approach to Langmuir-Blodgett deposition without the use of annealing or additives. To improve sample quality, an automated Langmuir-Blodgett thin film deposition system was developed; a custom dipping trough was fabricated, a sample dipping mechanism was designed and constructed, and the system was automated using custom LabVIEW software. Samples were fabricated in the form of ferroelectric capacitors on substrates of glass and silicon, and implement a unique step design with a bottom electrode of copper with an aluminum wetting layer and a top electrode of gold with an aluminum wetting layer. Samples were then characterized using a custom ferroelectric measurement program implemented in LabVIEW with a Keithley picoammeter/voltage supply to confirm electric coercivity properties. Further characterization using scanning electron microscopy and atomic force microscopy confirmed the improvement in thin film fabrication over previous methods.en_US
dc.identifier.urihttps://hdl.handle.net/1805/22686
dc.identifier.urihttp://dx.doi.org/10.7912/C2/2435
dc.language.isoen_USen_US
dc.rightsAttribution-NonCommercial-ShareAlike 4.0 International*
dc.rights.urihttps://creativecommons.org/licenses/by-nc-sa/4.0*
dc.subjectbeta phaseen_US
dc.subjectPolyvinylideneen_US
dc.subjectFluorideen_US
dc.subjecthexafluoropropyleneen_US
dc.subjectLangmuir Blodgetten_US
dc.subjectLangmuir Blodgett methoden_US
dc.subjectThin film formationen_US
dc.subjectThin dilmen_US
dc.subjectFerroelectricen_US
dc.subjectThin film characterizationen_US
dc.subjectPolymeren_US
dc.subjectPhysicsen_US
dc.subjectCondensed matteren_US
dc.subjectHysteresisen_US
dc.subjectLabVIEW programen_US
dc.subjectArduinoen_US
dc.subjectArduino Uno microcontrolleren_US
dc.subjectPVDFen_US
dc.subjectPVDF-HFPen_US
dc.subjectFerroelectric capacitoren_US
dc.subjectFerroelectric capacitorsen_US
dc.subjectMagnetron sputteringen_US
dc.subjectCoercivityen_US
dc.subjectScanning electron microscopyen_US
dc.subjectAtomic force microscopyen_US
dc.titleDeveloping an approach to improve beta-phase properties in ferroelectric pvd-hfp thin filmsen_US
dc.typeThesisen
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