Fabrication and analysis of CIGS nanoparticle-based thin film solar cells

Abstract

Fabrication and analysis of Copper Indium Gallium di-Selenide (CIGS) nanoparticles-based thin film solar cells are presented and discussed. This work explores non-traditional fabrication processes, such as spray-coating for the low-cost and highly-scalable production of CIGS-based solar cells.

CIGS nanoparticles were synthesized and analyzed, thin CIGS films were spray-deposited using nanoparticle inks, and resulting films were used in low-cost fabrication of a set of CIGS solar cell devices. This synthesis method utilizes a chemical colloidal process resulting in the formation of nanoparticles with tunable band gap and size. Based on theoretical and experimental studies, 100 nm nanoparticles with an associated band gap of 1.33 eV were selected to achieve the desired film characteristics and device performances. Scanning electron microcopy (SEM) and size measurement instruments (Zetasizer) were used to study the size and shape of the nanoparticles. Electron dispersive spectroscopy (EDS) results confirmed the presence of the four elements, Copper (Cu), Indium (In), Gallium (Ga), and Selenium (Se) in the synthesized nanoparticles, while X-ray diffraction (XRD) results confirmed the tetragonal chalcopyrite crystal structure. The ultraviolet-visible-near infra-red (UV-Vis-NIR) spectrophotometry results of the nanoparticles depicted light absorbance characteristics with good overlap against the solar irradiance spectrum.

The depositions of the nanoparticles were performed using spray-coating techniques. Nanoparticle ink dispersed in ethanol was sprayed using a simple airbrush tool. The thicknesses of the deposited films were controlled through variations in the deposition steps, substrate to spray-nozzle distance, size of the nozzle, and air pressure. Surface features and topology of the spray-deposited films were analyzed using atomic force microscopy (AFM). The deposited films were observed to be relatively uniform with a minimum thickness of 400 nm. Post-annealing of the films at various temperatures was studied for the photoelectric performance of the deposited films. Current density and voltage (J/V) characteristics were measured under light illumination after annealing at different temperatures. It was observed that the highest photoelectric effect resulted in annealing temperatures of 150-250 degree centigrade under air atmosphere.

The developed CIGS films were implemented in solar cell devices that included Cadmium Sulfide (CdS) and Zinc Oxide (ZnO) layers. The CdS film served as the n-type layer to form a pn junction with the p-type CIGS layer. In a typical device, a 300 nm CdS layer was deposited through chemical bath deposition on a 1 $mu$m thick CIGS film. A thin layer of intrinsic ZnO was spray coated on the CdS film to prevent shorting with the top conductor layer, 1.5 μm spray-deposited aluminum doped ZnO layer. A set of fabricated devices were tested using a Keithley semiconductor characterization instrument and micromanipulator probe station. The highest measured device efficiency was 1.49%. The considered solar cell devices were simulated in ADEPT 2.0 solar cell simulator based on the given fabrication and experimental parameters. The simulation module developed was successfully calibrated with the experimental results. This module can be used for future development of the given work.