ScholarWorksIndianapolis
  • Communities & Collections
  • Browse ScholarWorks
  • English
  • Català
  • Čeština
  • Deutsch
  • Español
  • Français
  • Gàidhlig
  • Italiano
  • Latviešu
  • Magyar
  • Nederlands
  • Polski
  • Português
  • Português do Brasil
  • Suomi
  • Svenska
  • Türkçe
  • Tiếng Việt
  • Қазақ
  • বাংলা
  • हिंदी
  • Ελληνικά
  • Yкраї́нська
  • Log In
    or
    New user? Click here to register.Have you forgotten your password?
  1. Home
  2. Browse by Subject

Browsing by Subject "ALU"

Now showing 1 - 1 of 1
Results Per Page
Sort Options
  • Loading...
    Thumbnail Image
    Item
    Multi-Threshold Low Power-Delay Product Memory and Datapath Components Utilizing Advanced FinFET Technology Emphasizing the Reliability and Robustness
    (2020-12) Yadav, Avinash; Rizkalla, Maher E.; Ytterdal, Trond; Lee, John J.
    In this thesis, we investigated the 7 nm FinFET technology for its delay-power product performance. In our study, we explored the ASAP7 library from Arizona State University, developed in collaboration with ARM Holdings. The FinFET technology was chosen since it has a subthreshold slope of 60mV/decade that enables cells to function at 0.7V supply voltage at the nominal corner. An emphasis was focused on characterizing the Non-Ideal effects, delay variation, and power for the FinFET device. An exhaustive analysis of the INVx1 delay variation for different operating conditions was also included, to assess the robustness. The 7nm FinFET device was then employed into 6T SRAM cells and 16 function ALU. The SRAM cells were approached with advanced multi-corner stability evaluation. The system-level architecture of the ALU has demonstrated an ultra-low power system operating at 1 GHz clock frequency.
About IU Indianapolis ScholarWorks
  • Accessibility
  • Privacy Notice
  • Copyright © 2025 The Trustees of Indiana University