Mirza, Qurat-ul-AnnJoglekar, Yogesh2015-12-292015-12-292012-04-13Qurat-ul-Ann Mirza and Yogesh Joglekar. (2012, April 13). HODGKIN-HUXLEY MODEL FOR ACTION POTENTIAL: MEMRISTIVE CHARACTERISTICS. Poster session presented at IUPUI Research Day 2012, Indianapolis, Indiana.https://hdl.handle.net/1805/7826poster abstractMemristor, a short for memory resistor, is the fourth ideal circuit element whose value varies as a function of charge that has passed through the de-vice. Voltage-gated ion channels in biological membranes share this charac-teristic of a memristor. In 1952, Hodgkin and Huxley (H-H) developed an electrical circuit model (HH model) to describe the time-dependent action potentials mediated by voltage-gated ion channels. We investigate the de-pendence of the action potential, including the onset of repeated spiking, on the applied current I, sodium and potassium channel conductance, and the membrane capacitance. We use a MATLAB code with the fourth-order Runge-Kutta method to solve the HH equations. Our results suggest that the memristive characteristics of the ion channels can be tuned over a wide range of parameters.en-USHODGKIN-HUXLEY MODELMemristormemory resistorion channelsPoster